Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas

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The carbonization conditions (acetylene pressure and heating rate) to obtain close carbonized layer covered on Si(001) substrate without thermal pits is studied. Subsequent hetero-epitaxial 3C-SiC with smooth surface have been grown by low-pressure CVD. Single-crystalline carbonized layers could be grown at 1050°C by using suitable carbonization processes. The surfaces of Si were covered with single-crystalline 3C-SiC layers at an early stage of carbonization, preventing out-diffusion of Si atoms from Si substrates. 3C-SiC epi-film have RMS = 0.4nm but no single domain. The protrusion density of the film was an order of 1000 cm-2.

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Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

247-250

Citation:

Y. Hirabayashi et al., "Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas", Materials Science Forum, Vols. 600-603, pp. 247-250, 2009

Online since:

September 2008

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$38.00

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