Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

Abstract:

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Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

251-254

DOI:

10.4028/www.scientific.net/MSF.600-603.251

Citation:

Y. M. Zhao et al., "Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer", Materials Science Forum, Vols. 600-603, pp. 251-254, 2009

Online since:

September 2008

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Price:

$35.00

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