Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace
In this work the problem of growth rate decaying during growth is considered. A new design and growth profiles are suggested in order to reduce deviations of growth parameters during the process of growth.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
E. Y. Tupitsyn et al., "Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace ", Materials Science Forum, Vols. 600-603, pp. 27-30, 2009