Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace

Abstract:

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In this work the problem of growth rate decaying during growth is considered. A new design and growth profiles are suggested in order to reduce deviations of growth parameters during the process of growth.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

27-30

DOI:

10.4028/www.scientific.net/MSF.600-603.27

Citation:

E. Y. Tupitsyn et al., "Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace ", Materials Science Forum, Vols. 600-603, pp. 27-30, 2009

Online since:

September 2008

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Price:

$35.00

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