EPR Identification of Defects and Impurities in SiC: To be Decisive

Abstract:

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In EPR (electron paramagnetic resonance) identification of point defects, hyperfine (HF) interaction is decisive information not only for chemical identity but also for the local geometry and the electronic state. In some intrinsic defects in SiC, the wave function of the unpaired electron extends quite unevenly among major atoms comprising the defects. In such a case, the determination of the number of equivalent atoms and the chemical identity (Si or C) of those atoms even with weak HF splitting are useful to compare with HF parameters obtained theoretically. For vacancy-related defects of relatively deep levels, the sum of the spin densities on the nearest-neighbor shell is found to be 60-68%.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

279-284

DOI:

10.4028/www.scientific.net/MSF.600-603.279

Citation:

J. Isoya et al., "EPR Identification of Defects and Impurities in SiC: To be Decisive", Materials Science Forum, Vols. 600-603, pp. 279-284, 2009

Online since:

September 2008

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Price:

$35.00

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