Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions
The stacking fault formation in highly nitrogen-doped n+ 4H-SiC single crystal substrates during high temperature treatment has been investigated in terms of the surface preparation conditions of substrates. Substrates with a relatively large surface roughness showed a resistivity increase after annealing at 1100°C, which was confirmed to be caused by the formation and expansion of double Shockley-type basal plane stacking faults in the substrates. The occurrence of the stacking faults largely depended on the surface preparation conditions of the substrates, which indicates that the primary nucleation sites of stacking faults exist in the near-surface regions of substrates. In this regard, mechano-chemically polished (MCP) substrates with a minimum surface roughness (< 0.3 nm) exhibited no resistivity increase and very few stacking faults after annealing even when the nitrogen concentration of the substrates exceeded 1×1019 cm-3.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
M. Katsuno et al., "Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions", Materials Science Forum, Vols. 600-603, pp. 341-344, 2009