Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers

Abstract:

Article Preview

Electron-hole recombination activated Shockley partial dislocations bounding expanding stacking faults and their interactions with threading dislocations have been studied in 4H-SiC epitaxial layers using synchrotron x-ray topography. The bounding partials appear as white stripes or narrow dark lines in back-reflection X-ray topographs recorded using the basal plane reflections. Such contrast variations are attributable to the defocusing/focusing of the diffracted X-rays due to the edge component of the partial dislocations, which creates a convex/concave distortion of the basal planes. Simulation results based on the ray-tracing principle confirm our argument. The sign of the partial dislocations can be subsequently determined.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

357-360

DOI:

10.4028/www.scientific.net/MSF.600-603.357

Citation:

Y. Chen et al., "Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers", Materials Science Forum, Vols. 600-603, pp. 357-360, 2009

Online since:

September 2008

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.