Structural Analysis of Off-Axis SiC Planes for the Growth of SiC and AlGaN Films


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An orientation relationship between the cubic 3C and nH hexagonal structures was developed to identify low surface energy, close packed, conducive to growth hexagonal semi-polar planes. This was done to identify planes on which micropipe free SiC crystals, and/or hetero-epitaxial AlGaN structures with a reduced piezoelectric field and a smaller lattice mismatch could be grown. The nH (33 0 2n)H and (33 0 n )H hexagonal planes, which correspond to the (100)C and (111)C cubic planes are identified, and equations are developed to determine their planar structure and packing density to assess whether there is a reasonable chance that high quality material can be grown on these surfaces and whether it is likely that stacking faults will be formed. It is shown that stacking faults will likely form in SiC crystals; it is also shown that good epitaxy of AlGaN films should be possible on these planes although it is likely stacking faults will be formed.



Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa






K. A. Jones "Structural Analysis of Off-Axis SiC Planes for the Growth of SiC and AlGaN Films", Materials Science Forum, Vols. 600-603, pp. 369-372, 2009

Online since:

September 2008





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