Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material

Abstract:

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The novel technique microwave detected photo induced current transient spectroscopy (MD-PICTS) was applied to semi-insulating 6H-SiC in order to investigate the properties of inherent defect levels. Defect spectra can be obtained in the similar way to conventional PICTS and DLTS. However, there is no need for contacting the samples, which allows for non-destructive and spatially resolved electrical characterization. This work is focused on the investigation of semi-insulating 6H-SiC grown under different C/Si-ratios. In the corresponding MD-PICTS spectra several shallow defect levels appear in the low temperature range. However the peak assignment needs further investigation. Additionally different trap reemission dynamics are obtained for higher temperatures, which are supposed to be due to different compensation effects.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

405-408

DOI:

10.4028/www.scientific.net/MSF.600-603.405

Citation:

S. Hahn et al., "Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material ", Materials Science Forum, Vols. 600-603, pp. 405-408, 2009

Online since:

September 2008

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Price:

$35.00

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