Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 1016 and 1017 cm-3
Low temperature infrared photoluminescence (PL) performed on a large set of bulk SiC substrates has revealed distinct series of lines between 0.8 and 1.5 eV for samples with nitrogen levels between ~ 1016 and 1017 cm-3. Semi-insulating and intentionally N-doped wafers grown by PVT and HTCVD were investigated. Two groups of PL lines clustered near 1.0 and 1.35 eV, respectively, were observed in n-type 4H-SiC. Not surprisingly, a multiplicity of features at slightly different energy positions was found for this emission from the 6H- and 15R-SiC polytypes. Both sets of lines were not observed for substrates with N doping concentrations greater than 3x1017cm-3. Thus, it appears this IR emission can serve as optical “fingerprints” of bulk n-type substrate with moderate levels of N impurities. Models for the possible origins of these lines will also be discussed.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
E.R. Glaser et al., "Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 1016 and 1017 cm-3", Materials Science Forum, Vols. 600-603, pp. 449-452, 2009