Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes

Abstract:

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X-ray diffraction (XRD) rocking curves were mapped across 4H-SiC, 3-inch, 8° off-cut substrates prior to and after epitaxial growth, where a pattern of slightly higher defectivity region was clearly seen. This same pattern was apparent in both cross-polarization images of the epiwafers and microwave photoconductivity decay (μ-PCD) lifetime maps of the epilayers, where the latter shows the lifetime in the high defectivity regions had drastically decreased. Within the short lifetime regions, electron trap concentrations were similar to that as in the long lifetime regions as determined by deep level transient spectroscopy; however, the extended defect density was significantly higher. Consequently, high spatial resolution XRD can be a valuable tool in preselecting substrates for epitaxial growth to produce low defect density material with long injected carrier lifetimes.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

481-484

DOI:

10.4028/www.scientific.net/MSF.600-603.481

Citation:

R. L. Myers-Ward et al., "Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes", Materials Science Forum, Vols. 600-603, pp. 481-484, 2009

Online since:

September 2008

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Price:

$35.00

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