Variations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers

Abstract:

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The effects of measurement technique and measurement conditions (injection level, temperature) on the measured carrier lifetimes in n- 4H-SiC epilayers are investigated. For three optical measurement techniques, it is shown that the high and low injection lifetimes can vary dramatically. Differences in the lifetime for varying injection level and temperature are approached both experimentally and via carrier dynamics simulations, assuming Z1/Z2 as the dominant defect. Reasonable agreement between measured and calculated behavior is obtained, as is insight into the recombination kinetics associated with the lifetime limiting defect.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

489-492

DOI:

10.4028/www.scientific.net/MSF.600-603.489

Citation:

P. B. Klein et al., "Variations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers", Materials Science Forum, Vols. 600-603, pp. 489-492, 2009

Online since:

September 2008

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$35.00

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