Investigation of the Internal Carrier Distribution in 4H-SiC Pin-Diodes by Laser Absorption Experiments
We present an experimental equipment for studying the charge carrier distribution in the interior of bipolar 4H-SiC high power devices by means of laser absorption measurements. Since the light absorption coefficient in a semiconductor depends on the electron and hole concentration, the attenuation of a laser beam transmitted through a sample is an integral function of the local charge carrier density. In order to detect the tiny changes in the light intensity caused by the plasma-optical effect, a highly sensitive measurement set-up has been developed. Its crucial components are a low-noise blue laser and a high-speed and broad-band photo-diode amplifier circuit. Sample preparation is sophisticated and requires special care. We investigated charge carrier profiles in 4H-SiC pin-diodes in the high-injection regime at current densities between 175 A/cm² and 350 A/cm². The measured charge carrier profiles are in good agreement with computer simulations.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
D. Werber et al., "Investigation of the Internal Carrier Distribution in 4H-SiC Pin-Diodes by Laser Absorption Experiments", Materials Science Forum, Vols. 600-603, pp. 493-496, 2009