Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC

Abstract:

Article Preview

The defects produced by irradiation with 7 MeV C+ induce a change in the electrical properties of 4H-SiC Schottky diodes. Capacitance-voltage and Current-voltage characteristics of the diodes fabricated in epilayers doped with different nitrogen concentrations were monitored before and after irradiation with different fluences. The Capacitance-voltage curves show free carrier compensation after low fluence irradiation and it was found that the reduction of carriers per ion induced vacancy increases with nitrogen content. The forward current-voltage characteristics of the diodes show an increase in the series resistance after irradiation. This change is mainly related to the high compensation occurring around the end of the ion range.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

619-622

DOI:

10.4028/www.scientific.net/MSF.600-603.619

Citation:

G. Izzo et al., "Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC ", Materials Science Forum, Vols. 600-603, pp. 619-622, 2009

Online since:

September 2008

Keywords:

Export:

Price:

$35.00

In order to see related information, you need to Login.