4H Silicon Carbide Etching Using Chlorine Trifluoride Gas

Abstract:

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The etching technology for 4H-silicon carbide (SiC) was studied using ClF3 gas at 673-973K, 100 % and atmospheric pressure in a horizontal reactor. The etch rate, greater than 10 um/min, can be obtained for both the C-face and Si-face at substrate temperatures higher than 723 K. The etch rate increases with the increasing ClF3 gas flow rate. The etch rate of the Si-face is smaller than that of the C-face. The etched surface of the Si-face shows many hexagonal-shaped etch pits. The C-face after the etching is very smooth with a very small number of round shaped shallow pits. The average roughness of the etched surface tends to be small at the higher temperatures.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

655-658

DOI:

10.4028/www.scientific.net/MSF.600-603.655

Citation:

H. Habuka et al., "4H Silicon Carbide Etching Using Chlorine Trifluoride Gas", Materials Science Forum, Vols. 600-603, pp. 655-658, 2009

Online since:

September 2008

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