Paper Title:
4H Silicon Carbide Etching Using Chlorine Trifluoride Gas
  Abstract

The etching technology for 4H-silicon carbide (SiC) was studied using ClF3 gas at 673-973K, 100 % and atmospheric pressure in a horizontal reactor. The etch rate, greater than 10 um/min, can be obtained for both the C-face and Si-face at substrate temperatures higher than 723 K. The etch rate increases with the increasing ClF3 gas flow rate. The etch rate of the Si-face is smaller than that of the C-face. The etched surface of the Si-face shows many hexagonal-shaped etch pits. The C-face after the etching is very smooth with a very small number of round shaped shallow pits. The average roughness of the etched surface tends to be small at the higher temperatures.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
655-658
DOI
10.4028/www.scientific.net/MSF.600-603.655
Citation
H. Habuka, Y. Katsumi, Y. Miura, K. Tanaka, Y. Fukai, T. Fukae, Y. Gao, T. Kato, H. Okumura, K. Arai, "4H Silicon Carbide Etching Using Chlorine Trifluoride Gas", Materials Science Forum, Vols. 600-603, pp. 655-658, 2009
Online since
September 2008
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