4H-SiC p-Channel MOSFETs with Epi-Channel Structure

Abstract:

Article Preview

From a viewpoint of device application using p-channel SiC MOSFETs, control of their channel properties is of great importance. We aimed to control the electrical properties of 4H-SiC p-channel MOSFETs through locating the p-type epitaxial layer at the channel area, so called “epi-channel MOSFET” structure. We varied the dopant concentrations and the thickness of the epi-channel layer, and investigated their electrical properties. In case of heavily doped epi-channel samples, the devices indicated “normally-on” characteristics, and their channel mobility decreased slightly in comparison with the inversion-type devices. As for lightly doped epi-channel samples, the subthreshold current increased with thickness of the epi-channel layer keeping their “normally-off” characteristics. Their channel mobility also increased with thickness of the epi-channel layer. The peak value of field effect channel mobility of the sample with 2.5 μm thickness and 5×1015 /cm3 dopant concentration epi-channel was 18.1 cm2/Vs.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

711-714

DOI:

10.4028/www.scientific.net/MSF.600-603.711

Citation:

M. Okamoto et al., "4H-SiC p-Channel MOSFETs with Epi-Channel Structure", Materials Science Forum, Vols. 600-603, pp. 711-714, 2009

Online since:

September 2008

Export:

Price:

$35.00

In order to see related information, you need to Login.