In this study we report interface and carrier transport behaviour in Al/HfO2/SiO2/SiC MIS structure.
The density of the interface states (Dit) and the oxide trapped charges (Not) are found to be ~7 x 1011
eV-1cm-2 @ Ec-Et = 0.2 eV, and ~ 4.8 x 1011 cm-2. The temperature dependencies on gate current
density are explored to study the different charge transport mechanisms through the HfO2-based
dielectric stack on 4H-SiC. In the low voltage region, the conduction mechanism is controlled by a
space charge limited or electronic hopping conduction process. Beyond this region (1.25 MV/cm