Beveling of Silicon Carbide Wafer by Plasma Chemical Vaporization Machining

Abstract:

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Beveling is essential for preventing the chipping of the edge of a wafer during surface polishing and other processes. Plasma chemical vaporization machining (PCVM) is an atmospheric-pressure plasma etching process. It has a high removal rate equivalent to those of conventional machining methods such as grinding and lapping, which are used for high-hardness materials such as silicon carbide, due to the generation of high-density radicals in atmospheric-pressure plasma. Furthermore, PCVM does not damage the wafer surface because it is a purely chemical process; therefore, it is considered that PCVM can be used as an effective method of beveling the edge of SiC wafers. In this paper, we report the investigation of the beveling of SiC wafers by PCVM.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

843-846

DOI:

10.4028/www.scientific.net/MSF.600-603.843

Citation:

T. Kato et al., "Beveling of Silicon Carbide Wafer by Plasma Chemical Vaporization Machining", Materials Science Forum, Vols. 600-603, pp. 843-846, 2009

Online since:

September 2008

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Price:

$35.00

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