Etching Characteristics of Polycrystalline 3C-SiC Films Using Enhanced RIE

Abstract:

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This paper describes magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC thin films grown on thermally oxidized Si substrates by atmospheric pressure chemical vapor deposition (APCVD). The best vertical structures were obtained by the addition of 40 % O2, 16 % Ar, and 44 % CHF3 reactive gas at 40 mTorr of chamber pressure. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. These results show that in a magnetron RIE system, it is possible to etch SiC with lower power than that of the commercial RIE system. Therefore, poly 3C-SiC etched by magnetron RIE has the potential to be applied to micro/nano electro mechanical systems (M/NEMS).

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

875-878

DOI:

10.4028/www.scientific.net/MSF.600-603.875

Citation:

G. S. Chung and C. M. Ohn, "Etching Characteristics of Polycrystalline 3C-SiC Films Using Enhanced RIE ", Materials Science Forum, Vols. 600-603, pp. 875-878, 2009

Online since:

September 2008

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Price:

$35.00

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