Defects in Electron Irradiation Te-Doped GaSb Studied by Positron Lifetime Spectroscopy


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Defects induced by electron irradiation in Te-doped liquid-encapsulated Czochralski–grown GaSb were studied by the positron lifetime spectroscopy. The lifetime measurements under room temperature indicated there were VGa-related defects with a characteristic lifetime of 298 ps in the heavily Te-doped as-grown GaSb samples. The average lifetime increased with the increase of irradiation dose in lightly Te-doped GaSb,but the behavior was opposite in the heavily Te-doped samples. It should be due to the shift of Fermi level in heavily Te-doped GaSb and the occurrence of gallium vacancies in different charge states. In the temperature dependence measurements carried out on heavily Te-doped samples, we observed positron shallow trap, and this shallow trap should be attributed to positrons forming hyrogenlike Rydberg states with GaSb antisite defects.



Edited by:

S. J. Wang, Z. Q. Chen, B. Wang and Y. C. Jean




H. Li et al., "Defects in Electron Irradiation Te-Doped GaSb Studied by Positron Lifetime Spectroscopy", Materials Science Forum, Vol. 607, pp. 140-142, 2009

Online since:

November 2008