PL Imaging Study of In-Grown Stacking Faults in 4H-SiC Epitaxial Layer

Abstract:

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Two types of in-grown stacking faults in 4H-SiC epitaxial layers (SFs) were investigated using a new photoluminescence (PL) topographic imaging system, macro/micro PL mapping system, TEM and molten KOH etch pit observation. Shockley type SFs (SSFs) of 3C and 8H inclusion were identified as two different types of triangular PL emission patterns with corner angle of 60° and 30° spreading to the <11-20> down step direction. The peak wavelengths are 423nm and 465nm, respectively. The 60° triangular SSFs are 3C inclusion related with threading edge dislocations. The 30° triangular SSFs are 8H inclusions related with basal plane dislocations. Such SFs are caused by dislocation- related disturbance of the step flow growth resulting in insertion of new cubic sites in between the 4H hexagonal turns. The substrate surface roughness at the early stage of the epitaxial growth and the growth rate may correlate with the might be deeply related in the SFs formation of SFmight be deeply related in the SFs.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

129-132

DOI:

10.4028/www.scientific.net/MSF.615-617.129

Citation:

R. Hattori et al., "PL Imaging Study of In-Grown Stacking Faults in 4H-SiC Epitaxial Layer", Materials Science Forum, Vols. 615-617, pp. 129-132, 2009

Online since:

March 2009

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$35.00

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