Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method

Abstract:

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4H-SiC single crystals grown by the seeded physical vapour transport method have been investigated. These crystals were grown on 6H-SiC seeds. The influence of the seed temperature, form and granulation of SiC source materials on the stability and efficiency of the 4H polytype growth have been investigated. A new way of the seed mounting - with an open backside - has been used. Crystals obtained were free of structural defects in the form of hexagonal voids. The crystalline structure of SiC crystals was investigated by EBSD (Electron Backscatter Diffraction) and X-Ray diffraction methods. Moreover, defects in crystals and wafers cut from these crystals were examined by optical, scanning electron and atomic force microscopy combined with KOH etching.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

15-18

DOI:

10.4028/www.scientific.net/MSF.615-617.15

Citation:

E. Tymicki et al., "Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method", Materials Science Forum, Vols. 615-617, pp. 15-18, 2009

Online since:

March 2009

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Price:

$35.00

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