Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method
4H-SiC single crystals grown by the seeded physical vapour transport method have been investigated. These crystals were grown on 6H-SiC seeds. The influence of the seed temperature, form and granulation of SiC source materials on the stability and efficiency of the 4H polytype growth have been investigated. A new way of the seed mounting - with an open backside - has been used. Crystals obtained were free of structural defects in the form of hexagonal voids. The crystalline structure of SiC crystals was investigated by EBSD (Electron Backscatter Diffraction) and X-Ray diffraction methods. Moreover, defects in crystals and wafers cut from these crystals were examined by optical, scanning electron and atomic force microscopy combined with KOH etching.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
E. Tymicki et al., "Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method", Materials Science Forum, Vols. 615-617, pp. 15-18, 2009