Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon

Abstract:

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We analyze in detail the evolution of curvature of 3C-SiC layers grown on vicinal silicon substrates. A common feature of (100) and (111) oriented layers is a strongly asymmetric wafer bending that may suggest an anisotropic stress relaxation within the layer. A comparative study of the curvature, lattice parameter, surface morphology and structural defects for the off-angles ranging from 0.5° to 6° is performed in order to confirm or disprove this hypothesis. We find a homogeneous, tensile in-plane lattice deformation. We also show the correlation of the orientation of the high and low curvature axes with the morphology and defect pattern of the layer.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

169-172

DOI:

10.4028/www.scientific.net/MSF.615-617.169

Citation:

M. Zielinski et al., "Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon", Materials Science Forum, Vols. 615-617, pp. 169-172, 2009

Online since:

March 2009

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$35.00

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