Investigation of Graphene Growth on 4H-SiC
This paper reports the investigation of epitaxial graphene growth on 4H-SiC substrates. Growth has been performed under ultra high vacuum (UHV) conditions at temperatures ranging from 1150 to 1250°C, and the formation of the graphene layer has been monitored using X-ray photoelectron spectroscopy (XPS). A gradient of 100°C in temperature was introduced across the sample in order to grow a wide range of thicknesses along the sample. Atomic force microscopy (AFM) of the surface shows that the epitaxial graphene layer follows the topography of the bulk material and introduces very little surface roughness. This paper also reports the electrical characterisation of the graphene layers.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
A. Castaing et al., "Investigation of Graphene Growth on 4H-SiC", Materials Science Forum, Vols. 615-617, pp. 223-226, 2009