Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors
In this work we report the measurement of minority carrier lifetimes using the time resolved photoluminescence technique. It was found that 4H-SiC homo-epilayers grown using chlorine-based precursors have longer carrier lifetimes if used in conjunction with a tantalum carbide coated (TaC-coated) graphite susceptor rather than a SiC-coated graphite susceptor. Longer carrier lifetimes were obtained by optimal combinations of precursor gases and susceptor type. The controllable variation in lifetime from 250 ns to 9.9 s was demonstrated.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
A. Shrivastava et al., "Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors", Materials Science Forum, Vols. 615-617, pp. 291-294, 2009