Electrical and Mechanical Properties of Post-Annealed SiCxNy Films

Abstract:

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Amorphous SiCxNy films have been deposited on (100) Si substrates by RF magnetron sputtering of a SiC target in a variable nitrogen-argon atmosphere. The as-deposited films were submitted to thermal anneling in a furnace under argon atmosphere at 1000 °C for 1 hour. Composition and structure of unannealed and annealed samples were investigated by RBS and FTIR. To study the electrical characteristics of SiCxNy films, Metal-insulator-semiconductor (MIS) structures were fabricated. Elastic modulus and hardness of the films were determined by nanoindentation. The results of these studies showed that nitrogen content and thermal annealing affect the electrical, mechanical and structural properties of SiCxNy films.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

327-330

DOI:

10.4028/www.scientific.net/MSF.615-617.327

Citation:

M. A. Fraga et al., "Electrical and Mechanical Properties of Post-Annealed SiCxNy Films", Materials Science Forum, Vols. 615-617, pp. 327-330, 2009

Online since:

March 2009

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Price:

$35.00

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