Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping

Abstract:

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We describe the potential use of scanning probe microscopy (SPM) to image at nanoscale the charge transport in conductive layers, through dielectrics and barriers and in general for mapping of physical properties in wide band gap materials, processing and devices. Measurements through conductive layers are described discussing the limits and potentialities. Carrier profiling by SPM is presented and critically discussed as a complex method, crossing information from several techniques, to extract more insights related to carrier distribution.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

417-422

DOI:

10.4028/www.scientific.net/MSF.615-617.417

Citation:

V. Raineri et al., "Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping", Materials Science Forum, Vols. 615-617, pp. 417-422, 2009

Online since:

March 2009

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Price:

$35.00

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