Simulation of Ion Implantation in SiC: Dopant Profiling and Activation

Abstract:

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This paper presents a new simple hand using and fast simulator for ion implantation in 4H-SiC substrates developed by IBS for ESCAPEE European project. The modeling is divided in two parts: Empirical Depth Profile Simulator (EDPS) and Activation/Electrical Properties Simulator (AEPS). EDPS is calibrated for aluminium (Al) and nitrogen (N) implantations into 4H-SiC from SIMS measurements. Implanted dopant profile is constructed using the Pearson IV distribution. Moments of this distribution are extracted from experimental data (SIMS). This modeling takes multiple implantation and dopant diffusion into consideration. After annealing, activation properties related to the junction are predicted using AEPS. This allows prediction of sheet resistance of the implanted layer. Modeling accuracy is demonstrated by comparisons with experimental data.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

449-452

DOI:

10.4028/www.scientific.net/MSF.615-617.449

Citation:

S. Morata et al., "Simulation of Ion Implantation in SiC: Dopant Profiling and Activation", Materials Science Forum, Vols. 615-617, pp. 449-452, 2009

Online since:

March 2009

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Price:

$35.00

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