Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC
We report on recent advances in liquid phase epitaxial (LPE) conversion of a bulk Si wafer into self standing 3C-SiC. This includes the role of the stress control within the (100) oriented “crucibles”, the elaboration of crack-free (111) “crucibles” and the successful conversion of (100) and (111) oriented Si wafer. To date up to 100µm thick 3C-SiC(100) as well as 30µm thick crack-free 3C-SiC (111) materials have been obtained. The growth rate ranges from 20 to 100µm/h and locally can even reach ~1mm/h. In this work we focus on the structural, morphological and optical properties of the LPE-grown material.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
M. Zielinski et al., "Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC", Materials Science Forum, Vols. 615-617, pp. 49-52, 2009