Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry


Article Preview

Thermal oxidation process of silicon carbide in ultra-thin oxide regime has been studied by performing in-situ and real time spectroscopic ellipsometry. We found the thermal oxidation at 700°C forms no or extremely thin interface layers between SiC and oxide layers. In contrast, the oxidation at 850°C forms an interface layer of around 1 nm in thickness, having similar thickness and optical constants of the interface layers formed by the oxidation at higher temperature than 1000°C. To make clear the conditions no interface layer is formed, i.e., whether low temperature growth or thin oxide thickness is crucial, we have performed the oxidation at 850°C in the reduced oxygen pressure. Based on the results of these experiments, we discussed the origin of the formation of interface layers as well as the oxidation mechanism of SiC.



Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard






T. Takaku et al., "Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry", Materials Science Forum, Vols. 615-617, pp. 509-512, 2009

Online since:

March 2009




In order to see related information, you need to Login.