Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry

Abstract:

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Thermal oxidation process of silicon carbide in ultra-thin oxide regime has been studied by performing in-situ and real time spectroscopic ellipsometry. We found the thermal oxidation at 700°C forms no or extremely thin interface layers between SiC and oxide layers. In contrast, the oxidation at 850°C forms an interface layer of around 1 nm in thickness, having similar thickness and optical constants of the interface layers formed by the oxidation at higher temperature than 1000°C. To make clear the conditions no interface layer is formed, i.e., whether low temperature growth or thin oxide thickness is crucial, we have performed the oxidation at 850°C in the reduced oxygen pressure. Based on the results of these experiments, we discussed the origin of the formation of interface layers as well as the oxidation mechanism of SiC.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

509-512

DOI:

10.4028/www.scientific.net/MSF.615-617.509

Citation:

T. Takaku et al., "Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry", Materials Science Forum, Vols. 615-617, pp. 509-512, 2009

Online since:

March 2009

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Price:

$35.00

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