Effect of High Temperature Oxidation of 4H-SiC on the Near-Interface Traps Measured by TDRC

Abstract:

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In this work the effect of oxidation temperature of 4H-SiC on the density of near-interface traps is studied. It is seen that the portion of traps with slower emission times decreases with increasing oxidation temperature. Despite this reduction, high temperature oxidation alone is not useful to achieve low density of interface traps at the SiO2/4H-SiC interface.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

537-540

DOI:

10.4028/www.scientific.net/MSF.615-617.537

Citation:

F. Allerstam and E. Ö. Sveinbjörnsson, "Effect of High Temperature Oxidation of 4H-SiC on the Near-Interface Traps Measured by TDRC", Materials Science Forum, Vols. 615-617, pp. 537-540, 2009

Online since:

March 2009

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Price:

$35.00

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