Residual Stress Measurement on Hetero-Epitaxial 3C-SiC Films
The fabrication of SiC MEMS-based sensors requires new processes able to realize microstructures on bulk material or on the SiC surface. The hetero-epitaxial growth of 3C-SiC on silicon substrates allows one to overcome the traditional limitations of SiC micro-fabrication. This approach puts together the standard silicon bulk microfabrication methodologies with the robust mechanical properties of 3C-SiC. Using this approach we were able to fabricate SiC cantilevers for a new class of pressure sensor. In the present research, chemical vapour deposition (CVD) in the low pressure regime of 3C–SiC on silicon substrates was carried out using silane (SiH4), propane (C3 H8) and hydrogen (H2) as the silicon supply, carbon supply and gas carrier, respectively. The resulting bow in the MEMS structures was evaluated optically and the residual stress in the films calculated using the modified stoney equation and determined to be approximately 300 MPa.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
R. Anzalone et al., "Residual Stress Measurement on Hetero-Epitaxial 3C-SiC Films", Materials Science Forum, Vols. 615-617, pp. 629-632, 2009