We have studied different Schottky and ohmic contacts on 4H-SiC with the aim to obtain Schottky barrier diodes (SBDs) capable to operate at high temperatures, frequencies and power densities for long periods of time, and showing low power losses. The control of the Schottky barrier plays an important role in minimizing the power loss of a SBD, and the metal-semiconductor interface properties strongly affect the overall performances of such a device. Schottky contacts were deposited using Ni, Ti, Ti/Al, Mo and Mo/Al layers, and the annealing treatments have been performed up to 600 °C using a rapid thermal annealing process (RTA). Ohmic contacts have been deposited on the wafer backside using Ti/Al or Ti/Ni/Ag layers. The Schottky diodes have been characterized by means of standard current-voltage (I-V) and capacitance-voltage (C-V) techniques. Schottky diodes with Mo and Mo/Al barriers show a lower barrier height and better overall performances in forward polarization when compared to the Ti- and Ni-based contacts.