Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer

Abstract:

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The transfer and generation of extended defects in 4H-SiC epitaxial growth at a high growth rate are examined. An epilayer with virtually no basal plane dislocations (BPDs) is obtained using 4º off Si-face substrates, although the formation of 3C-polytype inclusions is occasionally observed. The behavior of BPDs and threading screw dislocations (TSDs) in epitaxial growth is also investigated by X-ray topography and transmission electron microscopy, and the propagation of BPDs and conversion and generation of TSDs in the epilayers are discussed.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

67-72

DOI:

10.4028/www.scientific.net/MSF.615-617.67

Citation:

H. Tsuchida et al., "Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer", Materials Science Forum, Vols. 615-617, pp. 67-72, 2009

Online since:

March 2009

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Price:

$35.00

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