Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors

Abstract:

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Electron-hole recombination-induced stacking faults have been shown to degrade the I-V characteristics of SiC power p-n diodes and DMOSFETs with thick drift epitaxial layers. In this paper, we investigate the effect of bipolar gate-to-drain current on vertical-channel JFETs. The devices have n- drift epitaxial layers of 12-μm and 100-μm thicknesses, and were stressed at a fixed gate-to-drain current density of 100 A/cm2 for 500 hrs and 5 hrs, respectively. Significant gate-to-drain and on-state conduction current degradations were observed after stressing the 100-μm drift VJFET. Annealing at 350°C reverses the stress induced degradations. After 500 hours of stressing, the gate-to-source, gate-to-drain, and blocking voltage characteristics of the 12-μm VJFET remain unaffected. However, the on-state drain current was 79% of its pre-stress value. Annealing at 350°C has no impact on the post-stress on-state drain current of the 12-μm VJFET. This leads us to attribute the degradation to a “burn-in” effect.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

719-722

DOI:

10.4028/www.scientific.net/MSF.615-617.719

Citation:

V. Veliadis et al., "Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors", Materials Science Forum, Vols. 615-617, pp. 719-722, 2009

Online since:

March 2009

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Price:

$35.00

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