Atomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiC

Abstract:

Article Preview

Using joined super-lattice Kinetic Monte Carlo simulations, continuous modelling and recent experimental data on the homoepitaxial growth of 4H Silicon Carbide we study the transition between monocrystalline and polycrystalline growth in terms of misorientation cut, growth rate and temperature. We compare these optimally calibrated results both with previous continuous models and literature data. We demonstrate that this study was, indeed, necessary to correctly reformulate the phase diagram of the transition.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

73-76

DOI:

10.4028/www.scientific.net/MSF.615-617.73

Citation:

M. Camarda et al., "Atomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiC", Materials Science Forum, Vols. 615-617, pp. 73-76, 2009

Online since:

March 2009

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.