Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures

Abstract:

Article Preview

Gallium nitride (GaN) and related alloys (AlxGa1-xN) are promising semiconductors for high-frequency and high-power devices applications. In particular, the growth of AlGaN/GaN heterostructures on SiC substrates, due to the high thermal conductivity of SiC, can lead to significant improvement in the device performances. An important issue in the fabrication of AlGaN/GaN devices is the influence of the required thermal budget (700-900°C) on the properties of Ohmic contacts and device isolation. In this work, the influence of thermal annealing on the fabrication of AlGaN/GaN devices was studied. Ti/Al/Ni/Au multilayers led to an Ohmic behavior with a specific resistance c in the 10-5 cm2 range upon annealing between 750°C and 850°C. The electrical behavior of Ohmic contacts was correlated with the evolution of the formed phases and with the temperature behavior of c. The stability of the inter-device isolation obtained by nitrogen-implantation during annealing at these temperatures was also monitored.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

967-970

DOI:

10.4028/www.scientific.net/MSF.615-617.967

Citation:

F. Roccaforte et al., "Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures", Materials Science Forum, Vols. 615-617, pp. 967-970, 2009

Online since:

March 2009

Export:

Price:

$38.00

In order to see related information, you need to Login.