Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)

Abstract:

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In order to achieve AlN bulk growth, HTCVD chlorinated process is investigated. High growth rate and high crystalline quality are targeted for AlN films grown on (0001) 4H SiC at 1750°C. The precursors used are ammonia NH3 and aluminium chlorides AlClx species formed in situ by action of Cl2 on high purity Al wire. Influences of N/Al ratio in the gas phase on growth rate, crystalline state and microstructure are presented. Growth rates of up to 200 µm/h have been reached for polycrystalline layers. Thermodynamic calculations were carried out and correlated to the experimental results. As-grown AlN layers were characterized by SEM and X-ray Diffraction. Surface morphology is studied by SEM and FEG-SEM and crystallographic orientations were obtained by X-ray diffraction on θ/2θ.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

987-990

DOI:

10.4028/www.scientific.net/MSF.615-617.987

Citation:

A. Claudel et al., "Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)", Materials Science Forum, Vols. 615-617, pp. 987-990, 2009

Online since:

March 2009

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Price:

$35.00

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