Dielectric Properties of PMMA-SiO2 Hybrid Films

Abstract:

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Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMA-SiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond.

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Periodical:

Edited by:

Arturo Ponce and Darío Bueno

Pages:

25-28

DOI:

10.4028/www.scientific.net/MSF.644.25

Citation:

M.D. Morales-Acosta et al., "Dielectric Properties of PMMA-SiO2 Hybrid Films", Materials Science Forum, Vol. 644, pp. 25-28, 2010

Online since:

March 2010

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$35.00

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