Electrical Characteristics of MOSFETs Using 3C-SiC with Buried Insulating Layer


Article Preview

Metal oxide semiconductor field effect transistors (MOSFETs) using SiC on insulator (SiC-OI) substrate with the structure of 3C-SiC (100)/SiO2/Si have been fabricated. SiC-OI substrates with SiC thicknesses of 100 nm and 600 nm are employed as starting materials and aluminum ions are implanted for p-regions or channel regions with a multi-implantation technique. Afterward, to form the source and drain regions, phosphorus ions are implanted. The gate oxide layer is grown in dry thermal oxidation, followed by post-oxidation annealing. Nickel is used as a contact material for the source and drain region, and aluminum is used for the gate material. From Id-Vd characteristics, 600 nm SiC-OI MOSFET is superior to 100 nm SiC-OI MOSFET. It is might that the crystalline quality of surface SiC layers affects the performance of MOSFET. SiC-OI MOSFET is operated successfully for the first time.



Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller




T. Tanehira et al., "Electrical Characteristics of MOSFETs Using 3C-SiC with Buried Insulating Layer ", Materials Science Forum, Vols. 645-648, pp. 1009-1012, 2010

Online since:

April 2010




[1] Moens P., Van den Bosch G., IEEE Trans. Device Mater. Reliab. 6, 349-357 (2006).

[2] S.M. Sze, Physics of semiconductor Devices, 2 nd Edition, J. Wiley and Sons Eds, p.91 (1981).

[3] J.P. Colinge, SILICON-ON-INSULATOR TECHNOLOGY: Materials to VLSI, 3 rd Edition, SPRINGER (2004).

[4] J.P. Colinge, IEEE International SOI Conference, Proceedings, 1-4 (2004).

[5] M. Nakao, H. Iikawa, K. Izumi, T. Yokoyama and S. Kobayashi, Mater. Sci. Forum, 483, 205 (2005).