Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation
This paper investigates the transient induced currents by energetic carbon ions in 6H-SiC MOSFETs and the carrier dynamic response due to such a heavy ion collision is simulated by Technology Computer Aided Design (TCAD). It was found that a heavy ion strike induces a bipolar effect on the transistor, whereby the current transients can vary in both polarities. And this has been attributed to the inherent in the MOSFET is a parasitic bipolar junction transistor.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
K. K. Lee et al., "Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation", Materials Science Forum, Vols. 645-648, pp. 1013-1016, 2010