9 kV, 1 cm2 SiC Gate Turn-Off Thyristors

Abstract:

Article Preview

In this paper, for the first time, we report a large area (1 cm2) SiC GTO with 9 kV blocking voltage fabricated on 100-mm 4H-SiC substrates with much reduced Basal Plane Dislocation (BPD) density. The static and dynamic characteristics are described. A forward drop of 3.7 V at 100 A (100 A/cm2) is measured at 25°C. A slight positive temperature coefficient of the forward drop is present at 300 A/cm2, indicating the possibility of paralleling multiple devices for higher current capability. The device exhibits extremely low leakage currents at high temperatures. The device has shown fast turn-on time of 53.9 nsec, and ~3.5 s of turn-off time, respectively. A stable forward voltage drop after electrical stress for >1000 hours has been achieved.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1017-1020

DOI:

10.4028/www.scientific.net/MSF.645-648.1017

Citation:

A. K. Agarwal et al., "9 kV, 1 cm2 SiC Gate Turn-Off Thyristors", Materials Science Forum, Vols. 645-648, pp. 1017-1020, 2010

Online since:

April 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.