Paper Title:
Large Area >8 kV SiC GTO Thyristors with Innovative Anode-Gate Designs
  Abstract

This study is focused on the design and fabrication of large-area (4.1x4.1 mm2 and 8.2x8.2 mm2), 8.1 kV 4H-SiC GTO Thyristors. The anode and gate fingers of Thyristors were designed with involute, cellular or hexagonal patterns. Forward blocking voltages as high as 8106 V and On-state voltage drop (Von) and differential specific on-resistance (Ron,sp) as low as 3.8 V and 6 mΩ-cm2 at 100 A/cm2 were measured on these devices. About 59% of 4.1 x4.1 mm2 and 29% of 8.2x8.2 mm2 Thyristors blocked voltages in excess of 6 kV. Detailed investigations revealed the impact of different anode/gate finger geometries on the device characteristics. Preliminary pulsed power characterization of the GTO Thyristors was also performed.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1021-1024
DOI
10.4028/www.scientific.net/MSF.645-648.1021
Citation
S. G. Sundaresan, H. Issa, D. Veeredy, R. Singh, "Large Area >8 kV SiC GTO Thyristors with Innovative Anode-Gate Designs", Materials Science Forum, Vols. 645-648, pp. 1021-1024, 2010
Online since
April 2010
Export
Price
$35.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Peter A. Losee, Can Hua Li, R.J. Kumar, T. Paul Chow, I. Bhat, Ronald J. Gutmann, Robert E. Stahlbush
Abstract:The on-state and switching performance of high voltage 4H-SiC junction rectifiers are compared using numerical simulations and experimental...
1363
Authors: Sei Hyung Ryu, Daniel J. Lichtenwalner, Edward van Brunt, Craig Capell, Michael J. O’Loughlin, Charlotte Jonas, Yemane Lemma, J. Zhang, Jim Richmond, Albert A. Burk, Brett Hull, Heather O’Brien, Aderinto Ogunniyi, Aivars J. Lelis, Jeff Casady, Dave Grider, Scott Allen, John W. Palmour
5.3: Bipolar and other Switching Devices
Abstract:The impact of the lifetime enhancement process using high temperature thermal oxidation method on 4H-SiC P-GTOs was investigated. 15 kV...
587