Large Area >8 kV SiC GTO Thyristors with Innovative Anode-Gate Designs
This study is focused on the design and fabrication of large-area (4.1x4.1 mm2 and 8.2x8.2 mm2), 8.1 kV 4H-SiC GTO Thyristors. The anode and gate fingers of Thyristors were designed with involute, cellular or hexagonal patterns. Forward blocking voltages as high as 8106 V and On-state voltage drop (Von) and differential specific on-resistance (Ron,sp) as low as 3.8 V and 6 mΩ-cm2 at 100 A/cm2 were measured on these devices. About 59% of 4.1 x4.1 mm2 and 29% of 8.2x8.2 mm2 Thyristors blocked voltages in excess of 6 kV. Detailed investigations revealed the impact of different anode/gate finger geometries on the device characteristics. Preliminary pulsed power characterization of the GTO Thyristors was also performed.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
S. G. Sundaresan et al., "Large Area >8 kV SiC GTO Thyristors with Innovative Anode-Gate Designs", Materials Science Forum, Vols. 645-648, pp. 1021-1024, 2010