Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers
Chloride-based growth on on-axis SiC substrates has been studied at higher temperature than typical CVD conditions. The use of chlorinated precursors allows to grow homo-polytypic layers and to achieve high growth rates for thick layers deposition. In this study a vertical reactor with the gas flow inlet at the bottom has been used to grow layers up to 1.5 mm thick. Thanks to the addition of hydrogen chloride (HCl) to the standard precursors mixture, growth rates up to 300 μm/h have been achieved at a process temperature lower than 1900 °C. Very pure layers, micropipe free, and with a low background doping have been grown on 4H and 6H-SiC carbon and silicon-face, respectively, on-axis 3” diameter substrates. The results obtained indicates that this process has the potential to become a novel bulk growth technique at lower temperature than usual, which could give several advantages.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
S. Leone et al., "Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers", Materials Science Forum, Vols. 645-648, pp. 107-110, 2010