Fabrication and Characteristics of Micro Heaters Based on Polycrystalline 3C-SiC for High Temperature and Voltage

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This paper describes fabrication and properties of polycrystalline 3C-SiC micro heaters built on AlN(0.1 μm)/3C-SiC(1.0 μm) suspended membranes using surface micromachining technology. 3C-SiC and AlN semiconductors which have a large energy band gap and very low lattice mismatch were used as sensors in harsh environment micro electromechanical system (MEMS) applications in this work. The 3C-SiC thin film was simultaneously used as a resistance of temperature detector (RTD) and micro heater for detecting heated temperature correctly. The thermal coefficient of resistance (TCR) of the implemented 3C-SiC RTD is about -5200 ppm/°C in the temperature range from 25°C to 50°C and -1040 ppm/°C at 500°C. The 3C-SiC micro heater generates about 500°C of heat at 10.3 mW. Moreover, 3C-SiC micro heaters stand at higher applied voltages than case of Pt micro heaters.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1085-1088

DOI:

10.4028/www.scientific.net/MSF.645-648.1085

Citation:

G. S. Chung and J. M. Jeong, "Fabrication and Characteristics of Micro Heaters Based on Polycrystalline 3C-SiC for High Temperature and Voltage ", Materials Science Forum, Vols. 645-648, pp. 1085-1088, 2010

Online since:

April 2010

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$35.00

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