SiC vs. Si - Evaluation of Potentials for Performance Improvement of Power Electronics Converter Systems by SiC Power Semiconductors

Abstract:

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Switching devices based on wide band gap materials as SiC o er a signi cant perfor- mance improvement on the switch level compared to Si devices. A well known example are SiC diodes employed e.g. in PFC converters. In this paper, the impact on the system level perfor- mance, i.e. eciency/power density, of a PFC and of a DC-DC converter resulting with the new SiC devices is evaluated based on analytical optimisation procedures and prototype systems. There, normally-on JFETs by SiCED and normally-off JFETs by SemiSouth are considered.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1101-1106

DOI:

10.4028/www.scientific.net/MSF.645-648.1101

Citation:

J. Biela et al., "SiC vs. Si - Evaluation of Potentials for Performance Improvement of Power Electronics Converter Systems by SiC Power Semiconductors", Materials Science Forum, Vols. 645-648, pp. 1101-1106, 2010

Online since:

April 2010

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$35.00

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