Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules

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In this paper we report the electrical and thermal performance characteristics of 1200 V, 100 A, 200°C (Tj), SiC MOSFET power modules configured in a dual-switch topology. Each switch-diode pair was populated by 2 x 56 mm2 SiC MOSFETs and 2 x 32 mm2 SiC junction barrier Schottky (JBS) diodes providing the 100 A rating at 200°C. Static and dynamic characterization, over rated temperature and power ranges, highlights the performance potential of this technology for highly efficient drive and power conversion applications. Electrical performance comparisons were also made between SiC power modules and equivalently rated and packaged IGBT modules. Even at a modest Tj=125°C, conduction and dynamic loss evaluation for 20kHz, Id=100A operation demonstrated a significant efficiency advantage (38-43%) over the IGBT components. Initial reliability data also illustrates the potential for SiC technology to provide robust performance in harsh environments.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1119-1122

DOI:

10.4028/www.scientific.net/MSF.645-648.1119

Citation:

J. D. Scofield et al., "Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules", Materials Science Forum, Vols. 645-648, pp. 1119-1122, 2010

Online since:

April 2010

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$35.00

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