Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 °C to +500 °C

Philip G. Neudeck; Michael J. Krasowski; Liang Yu Chen; Norman F. Prokop

doi:10.4028/www.scientific.net/MSF.645-648.1135

Paper Titles

Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules
p.1119

Performance and Reliability of SiC MOSFETs for High-Current Power Modules
p.1123

Inverter Loss Reduction Using 3kV SiC-JBS Diode and High-Speed Drive Circuit
p.1127

Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material
p.1131

Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 °C to +500 °C
p.1135

Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures
p.1139

NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications
p.1143

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration
p.1147

Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET
p.1151

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Characterization of 6H-SiC JFET Integrated...

Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 °C to +500 °C

Abstract:

The NASA Glenn Research Center has previously reported prolonged stable operation of simple prototype 6H-SiC JFET integrated circuits (logic gates and amplifier stages) for thousands of hours at +500 °C. This paper experimentally investigates the ability of these 6H-SiC JFET devices and integrated circuits to also function at cold temperatures expected to arise in some envisioned applications. Prototype logic gate ICs experimentally demonstrated good functionality down to -125 °C without changing circuit input voltages. Cascaded operation of gates at cold temperatures was verified by externally wiring gates together to form a 3-stage ring oscillator. While logic gate output voltages exhibited little change across the broad temperature range from -125 °C to +500 °C, the change in operating frequency and power consumption of these non-optimized logic gates as a function of temperature was much larger and tracked JFET channel conduction properties.