NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications

Abstract:

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Normally-off 4H-SiC MOSFETs are used to build NMOS logic gates intended for high temperature operation. The logic gates are characterized between 25°C and 500°C. Stable gate operation for more than 200h at 400°C in air is demonstrated. The excellent MOS reliability is quantified using I-V curves to dielectric breakdown and constant voltage stress to breakdown at 400°C. Although the effective tunneling barrier height B for electrons lowers to 2eV at 400°C, the extrapolated lifetime from constant voltage stress to breakdown measurements is longer than 105h at 400°C for typical logic gate operating field strength of 2MV/cm.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1143-1146

DOI:

10.4028/www.scientific.net/MSF.645-648.1143

Citation:

M. Le-Huu et al., "NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications ", Materials Science Forum, Vols. 645-648, pp. 1143-1146, 2010

Online since:

April 2010

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Price:

$35.00

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