600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration

Abstract:

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Bi-directional solid-state-circuit-breakers (SSCBs) are highly desirable in power-electronic fault-protection applications due to their high actuation speed and repeated fault isolation capability. Normally-on SiC vertical-channel JFETs (VJFETs) are excellent candidates for high power/temperature scalable SSCB applications as majority carrier devices with low conduction losses and stable +300°C thermal characteristics. 600-V / 2-A bi-directional power flow was demonstrated using two VJFETs connected back-to-back with their sources in common. The low VJFET pre-breakdown leakage currents and sharp onset of breakdown are critical in enabling bi-directional power flow. 0.1-cm2 low conduction-loss VJFETs were designed for efficient and reliable SSCB applications.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1147-1150

DOI:

10.4028/www.scientific.net/MSF.645-648.1147

Citation:

V. Veliadis et al., "600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration ", Materials Science Forum, Vols. 645-648, pp. 1147-1150, 2010

Online since:

April 2010

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Price:

$35.00

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