Deep-Level Defects in AlN Single Crystals: EPR Studies

Abstract:

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Electron paramagnetic resonance (EPR) at X-band (9.4 GHz) and Q-band (35 GHz) have been used to study defects in two samples of AlN monocrystals, grown by a sublimation sandwich method. These investigations reveal the presence of Fe2+ impurities in the reddish sample. The spectra of substitutional Fe2+ are highly anisotropic and could be observed even up to the room temperature. After illumination the signals showing the DX behavior were detected in the same sample. We assume these signals to arise due to the presence of the shallow donor center namely the isolated substitutional oxygen ON occupying the nitrogen position. In the second slightly amber-coloured sample EPR measurements before and after X-ray showed the presence of a deep-donor center which was assumed to be nitrogen vacancy VN. Based on thermoluminescence measurements the depth of the level was estimated to 0.45-0.5 eV.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1195-1198

DOI:

10.4028/www.scientific.net/MSF.645-648.1195

Citation:

I. V. Ilyin et al., "Deep-Level Defects in AlN Single Crystals: EPR Studies", Materials Science Forum, Vols. 645-648, pp. 1195-1198, 2010

Online since:

April 2010

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$35.00

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